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| SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT619 C1 C1 C2 C2 PARTMARKING DETAIL T619 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE 50 50 5 6 2 -55 to +150 UNIT V V V A A C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally Derate above 25C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2 2.5 16 20 62.5 50 UNIT W W mW/ C mW/ C C/ W C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 330 ZDT619 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 12 125 150 0.87 0.80 200 300 200 100 100 400 450 400 225 40 165 12 170 750 20 MHz pF ns ns 50 50 5 TYP. 190 65 8.3 100 100 100 20 200 220 1.0 1.0 MAX. UNIT V V V nA nA nA mV mV mV V V CONDITIONS. IC=100A IC=10mA* IE=100A VCB=40V VEB=4V VCES=40V IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=50mA* IC=2A, IB=50mA* IC=2A, VCE=2V* IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz VCC=10V, IC=1A IB1=-IB2=10mA VBE(sat) VBE(on) Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo ton t off *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 331 ZDT619 3 - 332 |
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